Browsing Archiv DOI by Title
Now showing items 1-20 of 35
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Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs
(České vysoké učení technické v Praze. České centrum IET, 2021)In this work, an investigation of the top-side aluminium (Al) metallization modification, under repetitive short-circuit (SC) type I measurements, was carried out for 650 V IGBTs. These measurements were ... -
CAUSES, DIRECTIONS AND CONSEQUIENCES OF THE TRANSFORMATION OF A LINEAR – MULTI-STAGE MODEL OF INTERNATIONAL ECOPNOMIC INTEGRATION IN THE PERIOD OF GLOBALIZATION
(Willenberg Foundation - CTU, 2014)Globalization, intensified internationalization of the world economy, an incomplete multi-sided trade system (WTO), the need for sustainable economic growth and challenges of innovative development bring essential ... -
Commercial Sweet Spots for GaN and CMOS Integration by Micro-Transfer-Printing
(České vysoké učení technické v Praze. České centrum IET, 2021)Several approaches for close integration of power switches with CMOS logic are subject of technical evaluations and academic discussions. This paper identifies the commercially relevant processing steps of ... -
CORPORATE SOCIAL RESPONSIBILITY: THE MAIN FORMS AND THE ROLE IN SOCIAL-AND-ECONOMIC POLICY
(Willenberg Foundation - CTU, 2014)The paper analyzes the main forms and the role of corporate social responsibility in social-and-economic policy. The author studied various forms of conducting social-andeconomic policy and was able to prove that under ... -
Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach
(České vysoké učení technické v Praze. České centrum IET, 2021)Fast-recovery diodes can exhibit negative differential resistance during reverse recovery which is associated with the formation of current filaments triggered by the presence of inhomogeneities along the ... -
Degradation of 600V GaN HEMTs under Repetitive Short Circuit Conditions
(České vysoké učení technické v Praze. České centrum IET, 2021)This paper descirbes impact of repetitive short-circuit stress on commercially available 600V e-mode GaN HEMTs with p-GaN gate. The devices were subjected to up to 105 short circuit stress cycles at 100V and ... -
DEGRADATION OF POWER SIC MOSFET Under REPETITIVE UIS and SHORT CIRCUIT STRESS
(České vysoké učení technické v Praze. České centrum IET, 2021)This paper investigates the reliability of commercial planar and trench 1.2-kV 4H-SiC MOFSETs under repetitive unclamped inductive switching (UIS) and short circuit (SC) stresses. The degradation of device characteristics, ... -
Development of an HBM-ESD tester for power semiconductor devices
(České vysoké učení technické v Praze. České centrum IET, 2021)Recently, the human body model - electrostatic discharge (HBM-ESD) test capability for power diodes was introduced among the requirements in the field of automotive include for a superior reliability. ... -
THE ECONOMIC NATURE AND STRUCTURE OF MUNICIPAL ECONOMY
(Willenberg Foundation - CTU, 2014)The paper outlines the essence of communal activities as an economic activity, aimed at providing the essential services for the population to enable normal living conditions in a particular area: natural and social ... -
EUROPEAN LIBERALIZM AND RUSSIAN ECONOMY – DRAMA OR UNREQUITED LOVE?
(Willenberg Foundation - CTU, 2014) -
Experimental Comparison of a New SAG-IGBT and Conventional DAG-IGBT Structures with LTO Design in terms of Turn-on Performance
(České vysoké učení technické v Praze. České centrum IET, 2021)n this paper, we compare a new Single Active Gate Trench IGBT(SAG-IGBT) with the conventional Double Active Trench Gate IGBT (DAG-IGBT) structures with the LTO (LOCOS Trench Oxide) technology. ... -
Fast Short Circuit Type I Detection Method based on VGE-Monitoring
(České vysoké učení technické v Praze. České centrum IET, 2021)In this paper, a Short Circuit type I detection method based on the monitoring of the gate voltage is investigated. The proposed detection principle relies on an existing method, which was ... -
Global Vectors: from the technological partnership to the systematic integration 2014
(Willenberg Foundation - CTU, 2014) -
High-Voltage IGBT turn-off at transition from overcurrent to desaturation
(České vysoké učení technické v Praze. České centrum IET, 2021)The turn-off capability of a power semiconductor is normally given by the datasheet with test conditions. The RBSOA (Reverse Bias Safe Operation Area) diagram limits the collector-emitter peak voltage and maximum ... -
The influence of electrical stress on the distribution of electrically active defects in IGBT
(České vysoké učení technické v Praze. České centrum IET, 2021)This paper highlights electrically active defects investigation of the sixth generation 1200 V trench stop silicon-based Insulated Gate Bipolar Transistors by Deep Level Transient Fourier Spectroscopy. The ... -
INNOVATIVE ELECTRONIC-REMOTE FORMS OF BANKING SERVICES
(Willenberg Foundation - CTU, 2014)The paper analyses specifics of financial innovations in the form of electronicremote forms of obtaining banking services that improve flexibility and mobility of customer access to the funds, customer-bank interoperability, ... -
INSTITUTIONAL CHANGES IN THE CONTEXT OF SOCIAL VALUES AND INTEREST GROUPS
(Willenberg Foundation - CTU, 2014)This paper is an attempt to analyze institutional changes in the economy synthesizing the original and new methodologies of institutional economics. The concepts of social values, interest groups, and social capital are ... -
INSTITUTIONAL ENVIRONMENT FOR DEVELOPING INTELLECTUAL SERVICES IN RUSSIAN ECONOMY
(Willenberg Foundation - CTU, 2014)The paper analyses the modern structure of intellectual services, basic institutional conditions and restrictions for their development in Russia. Possibilities for further expanding the market of intellectual services ... -
Key criteria for the short-circuit capability of IGBTs
(České vysoké učení technické v Praze. České centrum IET, 2021)Short-circuit behavior and capability are investigated and optimized during IGBT development. Thereby, knowledge about destruction and high-frequency short-circuit oscillation mechanisms is needed. For the thermal ... -
Measuring Transient I/V Turn-On Behavior of a Power MOSFET without a Current Sensor
(České vysoké učení technické v Praze. České centrum IET, 2021)Double pulse test (DPT) is usually used to characterize and verify turn-on/turn-off operation of power switches. Yet, new high frequency switching devices based on SiC and GaN technologies require much more elaborate ...