• Scalable Vertical GaN FETs (SV- GaN FETs) for Low Voltage Applications 

      Autor: Hongyang Yan; Sankara Narayanan, E.M.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This is the first report on a novel multi-polarization channel applied to realize normally-off and high- performance vertical GaN device devices for low voltage applications. This structure is made with 2DHG ...
    • Seminář jaderného inženýrství 2020 - sborník příspěvků 

      Autor: Novák, Ondřej
      (České vysoké učení technické v Praze, 2020)
    • Seminář jaderného inženýrství 2021 - sborník příspěvků 

      Autor: Novák, Ondřej
      (České vysoké učení technické v Praze, 2021)
    • A Simulation study of 6.5kV Gate Controlled Diode 

      Autor: Gurunath Vishwamitra Yoganath; Quang Tien Tran; Eckel, Hans-Günter
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Gate Controlled Diode (GCD) with micro-pattern trench structure, allows charge carrier modulation at the anode region by gate control. This is utilized to operate the diode at low saturation mode and ...
    • Singular Point Source MOS (S-MOS) Cell Concept 

      Autor: Rahimo, Munaf T. A.; Nistor, Iulian; Green, David
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      A Singular Point Source MOS (S-MOS) cell concept suitable for power semiconductor MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the manner by which the total channel ...
    • Structure-Aware Compact Thermal Models of Power LEDs 

      Autor: Kuźniak, K.; Szymańska, K.; Starzak, Ł.; Janicki, M.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper based on the example of white power LEDs illustrates the methodology for the generation of device compact thermal models, whose element values can be assigned physical meaning. The diode ...
    • Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness 

      Autor: Madhu-Lakshman Mysore; Basler, T.; Lutz, J.; Baburske, R.; Schulze, H.-J.; Niedernostheide, Franz-Josef
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is investigated. The application of the recently proposed injection enhanced floating emitter (IEFE) concept ...
    • TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices 

      Autor: Lachichi, A.; Mawby, P.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices A. Lachichi and P. Mawby, School of Engineering University of Warwick. Coventry, United Kingdom Abstract Reliability and performance ...
    • THE INDICATIVE APPROACH TO STUDYING CREDIT POTENTIAL OF A REGIONAL BANKING SYSTEM 

      Autor: Zotova, A.; Sviridov, O.; Davydenko, I.
      (Willenberg Foundation - CTU, 2014)
      The paper analyses the traditional (institutional) approach and the indicative approach to evaluating the state and efficiency of a regional system for crediting legal entities in a federal district. The authors propose ...