Prohlížení Archiv DOI dle názvu
Zobrazují se záznamy 20-35 z 35
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Measuring Transient I/V Turn-On Behavior of a Power MOSFET without a Current Sensor
(České vysoké učení technické v Praze. České centrum IET, 2021)Double pulse test (DPT) is usually used to characterize and verify turn-on/turn-off operation of power switches. Yet, new high frequency switching devices based on SiC and GaN technologies require much more elaborate ... -
MODEL OF ASSESSMENT OF GRADUATES’ COMPETITIVNESS LEVEL
(Willenberg Foundation - CTU, 2014)In the modern economy there is a sharp need for competitive specialists that conform to professional standards and fit mobility and flexibility of a labor market. A pressing problem is assessing the competitiveness level ... -
New method for Si-wafer resistivity determination
(České vysoké učení technické v Praze. České centrum IET, 2021)Wafer resistivity is one of the most important parameters in production of Power Semiconductor Devices (PSD). This parameter is mainly responsible for achieving required breakdown voltage and ... -
New Packaging Concepts: Bridging Devices and Applications
(České vysoké učení technické v Praze. České centrum IET, 2021)New Packaging Concepts: Bridging Devices and Applications Shiori Idaka, European Research Co-operation Centre. MITSUBISHI ELECTRIC EUROPE B.V. Ratingen, Germany Abstract The performance of power modules ... -
Parylene as Coating for Power Semiconductor Devices
(České vysoké učení technické v Praze. České centrum IET, 2021)The introduction of wide band gap semiconductor devices leads to smaller package sizes, higher power densities and higher switching frequencies, which is advantageous compared to the power electronics based ... -
Power device solutions for highly efficient power supplies
(České vysoké učení technické v Praze. České centrum IET, 2021)Switched mode power supplies (SMPS) for target applications covering a wide range from telecom rectifiers through servers to solar inverters or electric vehicle chargers share the need for high ... -
REGIONAL ECONOMIC POLICY WITH NREFERENCES TO GLOBALIZATION
(Willenberg Foundation - CTU, 2014)The paper analyses the problems of developing and conducting re-gional economic policy influenced by the factors of globalization. The authors focus on two key aspects of global integration of Russian regions: diversifica-tion ... -
Scalable Vertical GaN FETs (SV- GaN FETs) for Low Voltage Applications
(České vysoké učení technické v Praze. České centrum IET, 2021)This is the first report on a novel multi-polarization channel applied to realize normally-off and high- performance vertical GaN device devices for low voltage applications. This structure is made with 2DHG ... -
Seminář jaderného inženýrství 2020 - sborník příspěvků
(České vysoké učení technické v Praze, 2020) -
Seminář jaderného inženýrství 2021 - sborník příspěvků
(České vysoké učení technické v Praze, 2021) -
A Simulation study of 6.5kV Gate Controlled Diode
(České vysoké učení technické v Praze. České centrum IET, 2021)Gate Controlled Diode (GCD) with micro-pattern trench structure, allows charge carrier modulation at the anode region by gate control. This is utilized to operate the diode at low saturation mode and ... -
Singular Point Source MOS (S-MOS) Cell Concept
(České vysoké učení technické v Praze. České centrum IET, 2021)A Singular Point Source MOS (S-MOS) cell concept suitable for power semiconductor MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the manner by which the total channel ... -
Structure-Aware Compact Thermal Models of Power LEDs
(České vysoké učení technické v Praze. České centrum IET, 2021)This paper based on the example of white power LEDs illustrates the methodology for the generation of device compact thermal models, whose element values can be assigned physical meaning. The diode ... -
Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness
(České vysoké učení technické v Praze. České centrum IET, 2021)In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is investigated. The application of the recently proposed injection enhanced floating emitter (IEFE) concept ... -
TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices
(České vysoké učení technické v Praze. České centrum IET, 2021)TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices A. Lachichi and P. Mawby, School of Engineering University of Warwick. Coventry, United Kingdom Abstract Reliability and performance ... -
THE INDICATIVE APPROACH TO STUDYING CREDIT POTENTIAL OF A REGIONAL BANKING SYSTEM
(Willenberg Foundation - CTU, 2014)The paper analyses the traditional (institutional) approach and the indicative approach to evaluating the state and efficiency of a regional system for crediting legal entities in a federal district. The authors propose ...