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TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices
(České vysoké učení technické v Praze. České centrum IET, 2021)TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices A. Lachichi and P. Mawby, School of Engineering University of Warwick. Coventry, United Kingdom Abstract Reliability and performance ... -
THE INDICATIVE APPROACH TO STUDYING CREDIT POTENTIAL OF A REGIONAL BANKING SYSTEM
(Willenberg Foundation - CTU, 2014)The paper analyses the traditional (institutional) approach and the indicative approach to evaluating the state and efficiency of a regional system for crediting legal entities in a federal district. The authors propose ...