Degradation of 600V GaN HEMTs under Repetitive Short Circuit Conditions
Typ dokumentu
stať ve sborníkuconference paper
Autor
Kozárik, J.
Marek, J.
Minárik, M.
Chvála, A.
Debnár, T.
Donoval, M.
Stuchlíková, Ľ.
Metadata
Zobrazit celý záznamAbstrakt
This paper descirbes impact of repetitive short-circuit stress on commercially available 600V e-mode
GaN HEMTs with p-GaN gate. The devices were subjected to up to 105 short circuit stress cycles at 100V
and 300V drain voltage. Tests at voltages over 300V resulted in destruction of the devices. Electrical
characteristics were measured prior to, and after each sequence of pulses to observe gradual effects of
repetitive SC stress. The devices were also analysed by DLTS. A shift in all of the measured characteristics
was observed. Amount of the shift does not correlate with the number of SC cycles, which suggests more
parameters of the devices are affected. The shifts were also more pronounced at higher drain voltage.
The trapping was also analysed using DLTS. Due to high complexity of the spectra, only the traps verified
by simulation were investigated. At 100V stress voltage, the shift in DLTS spectra was small, at 200V it
was significant. Full analysis of possible origin of the observed deep levels is still ongoing.
Kolekce
- Archiv DOI [35]
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