The influence of electrical stress on the distribution of electrically active defects in IGBT

Abstract

This paper highlights electrically active defects investigation of the sixth generation 1200 V trench stop silicon-based Insulated Gate Bipolar Transistors by Deep Level Transient Fourier Spectroscopy. The focus is on the impact of electrical stress on defects distribution in the studied structures. Five electron- like deep energy levels ET1 (0.126 eV), ET2 (0.188 eV), ET3 (0.322 eV), ET4 (0.405 eV), and ET5 (0.514 eV), and nine hole-like deep energy levels HT1 (0.187 eV), HT2 (0.231 eV), HT3 (0.246 eV), HT4 (0.301 eV), HT5 (0.319 eV), HT6 (0.327 eV), HT7 (0.529 eV), HT8 (0.534 eV), and HT9 (0.750 eV) were identified. The presence of unintentional impurities like zinc, platinum, gold, etc. and emissions from structural imperfections was confirmed. A significant increase of the defect concentration after electrical stress in the temperature range of 120 to 225 K has been detected. Electrical stress did not affect the defect concentration above temperature 300 K.