Now showing items 1-20 of 35

    • Measuring Transient I/V Turn-On Behavior of a Power MOSFET without a Current Sensor 

      Author: Helmut, Dennis; Groos, Gerhard; Wachutka, Gerhard; Schrag, Gabriele
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Double pulse test (DPT) is usually used to characterize and verify turn-on/turn-off operation of power switches. Yet, new high frequency switching devices based on SiC and GaN technologies require much more elaborate ...
    • Parylene as Coating for Power Semiconductor Devices 

      Author: Clausner, S.; Hanf, M.; Meier, M. R.; Schweigart, H.; Kaminski, N.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      The introduction of wide band gap semiconductor devices leads to smaller package sizes, higher power densities and higher switching frequencies, which is advantageous compared to the power electronics based ...
    • Structure-Aware Compact Thermal Models of Power LEDs 

      Author: Kuźniak, K.; Szymańska, K.; Starzak, Ł.; Janicki, M.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper based on the example of white power LEDs illustrates the methodology for the generation of device compact thermal models, whose element values can be assigned physical meaning. The diode ...
    • Singular Point Source MOS (S-MOS) Cell Concept 

      Author: Rahimo, Munaf T. A.; Nistor, Iulian; Green, David
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      A Singular Point Source MOS (S-MOS) cell concept suitable for power semiconductor MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the manner by which the total channel ...
    • Scalable Vertical GaN FETs (SV- GaN FETs) for Low Voltage Applications 

      Author: Hongyang Yan; Sankara Narayanan, E.M.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This is the first report on a novel multi-polarization channel applied to realize normally-off and high- performance vertical GaN device devices for low voltage applications. This structure is made with 2DHG ...
    • Development of an HBM-ESD tester for power semiconductor devices 

      Author: Maresca, L.; Auriemma, G.; Boccarossa, M.; Borghese, A.; Riccio, M.; Breglio, G.; Irace, A.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Recently, the human body model - electrostatic discharge (HBM-ESD) test capability for power diodes was introduced among the requirements in the field of automotive include for a superior reliability. ...
    • Commercial Sweet Spots for GaN and CMOS Integration by Micro-Transfer-Printing 

      Author: Lerner, Ralf; Hansen, Nis Hauke
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Several approaches for close integration of power switches with CMOS logic are subject of technical evaluations and academic discussions. This paper identifies the commercially relevant processing steps of ...
    • Fast Short Circuit Type I Detection Method based on VGE-Monitoring 

      Author: Herrmann, C.; Liu, X.; Lutz, J.; Basler, T.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      In this paper, a Short Circuit type I detection method based on the monitoring of the gate voltage is investigated. The proposed detection principle relies on an existing method, which was ...
    • New method for Si-wafer resistivity determination 

      Author: Hájek, J.; Papež, V.; Horák, M.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Wafer resistivity is one of the most important parameters in production of Power Semiconductor Devices (PSD). This parameter is mainly responsible for achieving required breakdown voltage and ...
    • The influence of electrical stress on the distribution of electrically active defects in IGBT 

      Author: Drobný, J.; Marek, J.; Chvála, A.; Faraga, J.; Jagelka, M.; Stuchlíková, L.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper highlights electrically active defects investigation of the sixth generation 1200 V trench stop silicon-based Insulated Gate Bipolar Transistors by Deep Level Transient Fourier Spectroscopy. The ...
    • Key criteria for the short-circuit capability of IGBTs 

      Author: Treek van, V.; Schulze, H.-J.; Baburske, R.; Hille, F.; Niedernostheide, F.-J.; Pfirsch, F.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Short-circuit behavior and capability are investigated and optimized during IGBT development. Thereby, knowledge about destruction and high-frequency short-circuit oscillation mechanisms is needed. For the thermal ...
    • Degradation of 600V GaN HEMTs under Repetitive Short Circuit Conditions 

      Author: Kozárik, J.; Marek, J.; Minárik, M.; Chvála, A.; Debnár, T.; Donoval, M.; Stuchlíková, Ľ.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper descirbes impact of repetitive short-circuit stress on commercially available 600V e-mode GaN HEMTs with p-GaN gate. The devices were subjected to up to 105 short circuit stress cycles at 100V and ...
    • TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices 

      Author: Lachichi, A.; Mawby, P.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices A. Lachichi and P. Mawby, School of Engineering University of Warwick. Coventry, United Kingdom Abstract Reliability and performance ...
    • DEGRADATION OF POWER SIC MOSFET Under REPETITIVE UIS and SHORT CIRCUIT STRESS 

      Author: Marek, J.; Kozárik, J.; Chvála, A.; Minárik, M.; Stuchlíková, Ľ.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper investigates the reliability of commercial planar and trench 1.2-kV 4H-SiC MOFSETs under repetitive unclamped inductive switching (UIS) and short circuit (SC) stresses. The degradation of device characteristics, ...
    • Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs 

      Author: Madhu-Lakshman Mysore; Basler, Thomas; Lutz, Josef; Baburske, Roman; Schulze, Hans-Joachim; Niedernostheide, Franz-Josef
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      In this work, an investigation of the top-side aluminium (Al) metallization modification, under repetitive short-circuit (SC) type I measurements, was carried out for 650 V IGBTs. These measurements were ...
    • Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness 

      Author: Madhu-Lakshman Mysore; Basler, T.; Lutz, J.; Baburske, R.; Schulze, H.-J.; Niedernostheide, Franz-Josef
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is investigated. The application of the recently proposed injection enhanced floating emitter (IEFE) concept ...
    • Power device solutions for highly efficient power supplies 

      Author: Siemieniec, Ralf; Mente, René; Kutschak, Matteo; Pulsinelli, Francesco
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Switched mode power supplies (SMPS) for target applications covering a wide range from telecom rectifiers through servers to solar inverters or electric vehicle chargers share the need for high ...
    • Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach 

      Author: Balestra, Luigi; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Vobecký, Jan; Vemulapati, Umamaheswara
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Fast-recovery diodes can exhibit negative differential resistance during reverse recovery which is associated with the formation of current filaments triggered by the presence of inhomogeneities along the ...
    • High-Voltage IGBT turn-off at transition from overcurrent to desaturation 

      Author: Chen, Weinan; Qin, Chaozheng; Lutz, Josef; Basler, Thomas
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      The turn-off capability of a power semiconductor is normally given by the datasheet with test conditions. The RBSOA (Reverse Bias Safe Operation Area) diagram limits the collector-emitter peak voltage and maximum ...
    • Experimental Comparison of a New SAG-IGBT and Conventional DAG-IGBT Structures with LTO Design in terms of Turn-on Performance 

      Author: Kong, S. T.; Ngwendson, L.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      n this paper, we compare a new Single Active Gate Trench IGBT(SAG-IGBT) with the conventional Double Active Trench Gate IGBT (DAG-IGBT) structures with the LTO (LOCOS Trench Oxide) technology. ...