• High-Voltage IGBT turn-off at transition from overcurrent to desaturation 

      Autor: Chen, Weinan; Qin, Chaozheng; Lutz, Josef; Basler, Thomas
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      The turn-off capability of a power semiconductor is normally given by the datasheet with test conditions. The RBSOA (Reverse Bias Safe Operation Area) diagram limits the collector-emitter peak voltage and maximum ...
    • The influence of electrical stress on the distribution of electrically active defects in IGBT 

      Autor: Drobný, J.; Marek, J.; Chvála, A.; Faraga, J.; Jagelka, M.; Stuchlíková, L.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper highlights electrically active defects investigation of the sixth generation 1200 V trench stop silicon-based Insulated Gate Bipolar Transistors by Deep Level Transient Fourier Spectroscopy. The ...
    • INNOVATIVE ELECTRONIC-REMOTE FORMS OF BANKING SERVICES 

      Autor: Frolova, I. V.; Lebedeva, N. Y.
      (Willenberg Foundation - CTU, 2014)
      The paper analyses specifics of financial innovations in the form of electronicremote forms of obtaining banking services that improve flexibility and mobility of customer access to the funds, customer-bank interoperability, ...
    • INSTITUTIONAL CHANGES IN THE CONTEXT OF SOCIAL VALUES AND INTEREST GROUPS 

      Autor: Volchik, V. V.
      (Willenberg Foundation - CTU, 2014)
      This paper is an attempt to analyze institutional changes in the economy synthesizing the original and new methodologies of institutional economics. The concepts of social values, interest groups, and social capital are ...
    • INSTITUTIONAL ENVIRONMENT FOR DEVELOPING INTELLECTUAL SERVICES IN RUSSIAN ECONOMY 

      Autor: Ketova, N. P.; Ovchinnikov, V. N.
      (Willenberg Foundation - CTU, 2014)
      The paper analyses the modern structure of intellectual services, basic institutional conditions and restrictions for their development in Russia. Possibilities for further expanding the market of intellectual services ...
    • Key criteria for the short-circuit capability of IGBTs 

      Autor: Treek van, V.; Schulze, H.-J.; Baburske, R.; Hille, F.; Niedernostheide, F.-J.; Pfirsch, F.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Short-circuit behavior and capability are investigated and optimized during IGBT development. Thereby, knowledge about destruction and high-frequency short-circuit oscillation mechanisms is needed. For the thermal ...
    • Measuring Transient I/V Turn-On Behavior of a Power MOSFET without a Current Sensor 

      Autor: Helmut, Dennis; Groos, Gerhard; Wachutka, Gerhard; Schrag, Gabriele
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Double pulse test (DPT) is usually used to characterize and verify turn-on/turn-off operation of power switches. Yet, new high frequency switching devices based on SiC and GaN technologies require much more elaborate ...
    • MODEL OF ASSESSMENT OF GRADUATES’ COMPETITIVNESS LEVEL 

      Autor: Mikhalkina, E. V.; Seregina, V. V.; Seregina, E. A.
      (Willenberg Foundation - CTU, 2014)
      In the modern economy there is a sharp need for competitive specialists that conform to professional standards and fit mobility and flexibility of a labor market. A pressing problem is assessing the competitiveness level ...
    • New method for Si-wafer resistivity determination 

      Autor: Hájek, J.; Papež, V.; Horák, M.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Wafer resistivity is one of the most important parameters in production of Power Semiconductor Devices (PSD). This parameter is mainly responsible for achieving required breakdown voltage and ...
    • New Packaging Concepts: Bridging Devices and Applications 

      Autor: Shiori Idaka
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      New Packaging Concepts: Bridging Devices and Applications Shiori Idaka, European Research Co-operation Centre. MITSUBISHI ELECTRIC EUROPE B.V. Ratingen, Germany Abstract The performance of power modules ...
    • Parylene as Coating for Power Semiconductor Devices 

      Autor: Clausner, S.; Hanf, M.; Meier, M. R.; Schweigart, H.; Kaminski, N.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      The introduction of wide band gap semiconductor devices leads to smaller package sizes, higher power densities and higher switching frequencies, which is advantageous compared to the power electronics based ...
    • Power device solutions for highly efficient power supplies 

      Autor: Siemieniec, Ralf; Mente, René; Kutschak, Matteo; Pulsinelli, Francesco
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Switched mode power supplies (SMPS) for target applications covering a wide range from telecom rectifiers through servers to solar inverters or electric vehicle chargers share the need for high ...
    • REGIONAL ECONOMIC POLICY WITH NREFERENCES TO GLOBALIZATION 

      Autor: Ischenko-Padouvkova, O.; Movchan, I.
      (Willenberg Foundation - CTU, 2014)
      The paper analyses the problems of developing and conducting re-gional economic policy influenced by the factors of globalization. The authors focus on two key aspects of global integration of Russian regions: diversifica-tion ...
    • Scalable Vertical GaN FETs (SV- GaN FETs) for Low Voltage Applications 

      Autor: Hongyang Yan; Sankara Narayanan, E.M.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This is the first report on a novel multi-polarization channel applied to realize normally-off and high- performance vertical GaN device devices for low voltage applications. This structure is made with 2DHG ...
    • Seminář jaderného inženýrství 2020 - sborník příspěvků 

      Autor: Novák, Ondřej
      (České vysoké učení technické v Praze, 2020)
    • Seminář jaderného inženýrství 2021 - sborník příspěvků 

      Autor: Novák, Ondřej
      (České vysoké učení technické v Praze, 2021)
    • A Simulation study of 6.5kV Gate Controlled Diode 

      Autor: Gurunath Vishwamitra Yoganath; Quang Tien Tran; Eckel, Hans-Günter
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Gate Controlled Diode (GCD) with micro-pattern trench structure, allows charge carrier modulation at the anode region by gate control. This is utilized to operate the diode at low saturation mode and ...
    • Singular Point Source MOS (S-MOS) Cell Concept 

      Autor: Rahimo, Munaf T. A.; Nistor, Iulian; Green, David
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      A Singular Point Source MOS (S-MOS) cell concept suitable for power semiconductor MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the manner by which the total channel ...
    • Structure-Aware Compact Thermal Models of Power LEDs 

      Autor: Kuźniak, K.; Szymańska, K.; Starzak, Ł.; Janicki, M.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper based on the example of white power LEDs illustrates the methodology for the generation of device compact thermal models, whose element values can be assigned physical meaning. The diode ...
    • Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness 

      Autor: Madhu-Lakshman Mysore; Basler, T.; Lutz, J.; Baburske, R.; Schulze, H.-J.; Niedernostheide, Franz-Josef
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is investigated. The application of the recently proposed injection enhanced floating emitter (IEFE) concept ...