New Packaging Concepts: Bridging Devices and Applications

Abstract

New Packaging Concepts: Bridging Devices and Applications Shiori Idaka, European Research Co-operation Centre. MITSUBISHI ELECTRIC EUROPE B.V. Ratingen, Germany

Abstract The performance of power modules has continued to improve with Si IGBTs (Insulated Gate Bipolar Transistors), and current capacities ranging from several A to several thousand A and rated voltages ranging from several hundred V to several thousand V have been realized. However, with the expansion of power electronics applications and the demand for even higher efficiency, the specifications required for power modules are becoming more diverse, with lower loss, smaller size and weight, higher density, environmental resistance, longer life and so on. In addition, WBGs (Wide Band-gap semiconductors) such as SiC and GaN have been commercialized, and innovative approaches to bring out the performance of these devices are expected. In this paper, we will discuss the latest trends and future prospects of packaging technology for power modules in the domain of die bonding, wiring, encapsulation, insulation, and functional integration.