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Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness
(České vysoké učení technické v Praze. České centrum IET, 2021)
In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is
investigated. The application of the recently proposed injection enhanced floating emitter (IEFE)
concept ...
Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs
(České vysoké učení technické v Praze. České centrum IET, 2021)
In this work, an investigation of the top-side aluminium (Al) metallization modification, under repetitive
short-circuit (SC) type I measurements, was carried out for 650 V IGBTs. These measurements were ...