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Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs
(České vysoké učení technické v Praze. České centrum IET, 2021)
In this work, an investigation of the top-side aluminium (Al) metallization modification, under repetitive
short-circuit (SC) type I measurements, was carried out for 650 V IGBTs. These measurements were ...
High-Voltage IGBT turn-off at transition from overcurrent to desaturation
(České vysoké učení technické v Praze. České centrum IET, 2021)
The turn-off capability of a power semiconductor is normally given by the datasheet with test conditions.
The RBSOA (Reverse Bias Safe Operation Area) diagram limits the collector-emitter peak voltage and
maximum ...