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DEGRADATION OF POWER SIC MOSFET Under REPETITIVE UIS and SHORT CIRCUIT STRESS
(České vysoké učení technické v Praze. České centrum IET, 2021)
This paper investigates the reliability of commercial planar and trench 1.2-kV 4H-SiC MOFSETs under
repetitive unclamped inductive switching (UIS) and short circuit (SC) stresses. The degradation of device
characteristics, ...
The influence of electrical stress on the distribution of electrically active defects in IGBT
(České vysoké učení technické v Praze. České centrum IET, 2021)
This paper highlights electrically active defects investigation of the sixth generation 1200 V trench stop
silicon-based Insulated Gate Bipolar Transistors by Deep Level Transient Fourier Spectroscopy. The ...
Degradation of 600V GaN HEMTs under Repetitive Short Circuit Conditions
(České vysoké učení technické v Praze. České centrum IET, 2021)
This paper descirbes impact of repetitive short-circuit stress on commercially available 600V e-mode
GaN HEMTs with p-GaN gate. The devices were subjected to up to 105 short circuit stress cycles at 100V
and ...