Prohlížení Publikační činnost ČVUT dle autora "Hazdra P."
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Displacement damage and total ionisation dose effects on 4H-SiC power devices
Autor: Hazdra P.; Popelka S.
(IET Publishing Group, 2019)A comprehensive study of displacement damage and total ionisation dose effects on 4H-silicon carbide power devices is presented. Power diodes and transistors produced by different manufacturers were irradiated by high-energy ... -
Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth
Autor: Mortet V.; Taylor A.; Davydova M.; Jiránek J.; Fekete L.; Klimša L.; Šimek D.; Lambert N.; Sedláková S.; Kopeček J.; Hazdra P.
(Elsevier Science, 2022)The article deals with the growth of boron-doped diamond on substrates with a misorientation angle from 0 to 90°. The variation of the boron incorporation over two decades with the misorientation angle of the substrate is ... -
EVALUATION OF INKJET PRINTED HEATERS ARRAY FOR CHEMO-RESISTIVE GAS SENSOR
Autor: Povolný V.; Laposa A.; Kroutil J.; Voves J.; Ashcheulov P.; Hazdra P.
(TANGER, 2024)Heaters are an indispensable part of gas sensing platforms. It serves to heat the sensor, which increases the sensitivity of the active layer and helps in the desorption of the detected gas. The sensors are also heated to ... -
EVALUATION OF PRINTED INTERDIGITAL ELECTRODES ARRAY FOR CHEMO-RESISTIVE GAS SENSOR APPLICATION
Autor: Povolný V.; Laposa A.; Kroutil J.; Voves J.; Davydova M.; Hazdra P.
(TANGER, 2022)The article presents the design and preparation of a platform for a gas sensor application based on the ink print of silver nanoparticles on flexible substrates. -
Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode
Autor: Vobecký J.; Hazdra P.; Popelka S.; Sharma R.
(IEEE, 2015)The ON-state characteristics of a 1.7-kV 4H–SiC junction barrier Schottky diode were studied after 4.5-MeV electron irradiation. Irradiation doses were chosen to cause a light, strong, and full doping compensation of an ... -
Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers
Autor: Hazdra P.; Laposa A.; Šobáň Z.; Voves J.; Lambert N.; Davydova M.; Povolný V.; Taylor A.; Mortet V.
(Elsevier Science, 2022)Refractory metals (titanium, molybdenum, and zirconium) with a gold overlayer were used to form ohmic contacts on {113}-oriented boron-doped diamond epitaxial layers. Morphology and thickness of deposited layers were ... -
Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers
Autor: Hazdra P.; Laposa A.; Šobáň Z.; Voves J.; Lambert N.; Davydova M.; Povolný V.; Taylor A.; Mortet V.
(Elsevier Science, 2022)Refractory metals (titanium, molybdenum, and zirconium) with a gold overlayer were used to form ohmic contacts on {113}-oriented boron doped diamond epitaxial layers (boron concentration ranging from 1019 to 1021 cm−3). ... -
On end-fire super directivity of arrays of two elementary dipoles and isotropic radiators
Autor: Hazdra P.; Kraček J.; Lonský T.
(IET Publishing Group, 2019)The concept of source currents of a radiating source can be employed to express its directivity in some particular cases analytically. For an antenna array, this concept can be extended to the concept of a generalised ... -
Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation
Autor: Hazdra P.; Popelka S.; Schöner A.
(IEEE, 2018)Local lifetime reduction by proton irradiation was used to optimize static and dynamic parameters of a 10 kV SiC p-i-n diode. Carrier lifetime was reduced locally at the anode side by irradiation with 800 keV protons at ... -
Power Diode Structures Realized on (113) oriented Boron Doped Diamond
Autor: Hazdra P.; Laposa A.; Šobáň Z.; Povolný V.; Voves J.; Lambert N.; Taylor A.; Mortet V.
(České centrum Institution of Engineering and Technology, 2023)The article deals with the preparation and characterization of ohmic contacts, pseudo-vertical, and vertical Schottky barrier diodes on (113) oriented boron doped diamond. -
Properties of boron-doped (113) oriented homoepitaxial diamond layers
Autor: Mortet V.; Taylor A.; Lambert N.; Gedeonová Z.; Fekete L.; Lorinčík J.; Klimša L.; Kopeček J.; Hubík P.; Šobáň Z.; Laposa A.; Davydova M.; Voves J.; Pošta A.; Povolný V.; Hazdra P.
(Elsevier Science, 2021)Although significant efforts have been dedicated to optimize the quality of epitaxial diamond layers, reported properties of diamond based electronic devices do not yet approach expected theoretical values. Recent works ... -
Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers
Autor: Hazdra P.; Laposa A.; Šobáň Z.; Taylor A.; Lambert N.; Povolný V.; Kroutil J.; Gedeonová Z.; Hubík P.; Mortet V.
(Elsevier Science, 2022)The article reports for the first time about the successful fabrication of pseudo-vertical diodes on {113} oriented homoepitaxial boron-doped diamond using molybdenum as a metal for both the Schottky and ohmic contacts. ... -
Pseudo-vertical Schottky diode with ruthenium contacts on (113) boron-doped homoepitaxial diamond layers
Autor: Hazdra P.; Laposa A.; Šobáň Z.; Kroutil J.; Lambert N.; Povolný V.; Taylor A.; Mortet V.
(WILEY-V C H VERLAG GMBH, 2023)In this article, the electrical properties of pseudo-vertical Schottky barrier diodes (pVSBDs) prepared on (113)–oriented boron-doped diamond layers using ruthenium for both the ohmic and Schottky contacts were investigated. -
Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices
Autor: Hazdra P.; Smrkovský P.; Popelka S.
(WILEY-V C H VERLAG GMBH, 2021)The effect of radiation damage on the minority carrier lifetime in the 4 H-SiC epilayers forming the n-base of the power p-i-n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and ... -
Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV
Autor: Hazdra P.; Vobecký J.
(WILEY-V C H VERLAG GMBH, 2019)Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Junction Barrier Schottky power SiC diodes were irradiated with 1.05, 2.1, 5 and 10 MeV electrons with doses up to 600 kGy. ... -
Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models
Autor: Hazdra P.; Popelka S.
(Trans Tech Publications, 2019)Compact simulation models of two key silicon carbide power components, the Junction Barrier Schottky diode and the power MOSFET, which are taking into account the effect of irradiation by high-energy electrons are presented. -
Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes
Autor: Hazdra P.; Smrkovský P.; Vobecký J.; Mihaila A.
(IEEE, 2021)The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy ... -
Radiation resistance of wide-bandgap semiconductor power transistiors
Autor: Hazdra P.; Popelka S.
(WILEY-V C H VERLAG GMBH, 2017)The paper compares radiation resistance of SiC MOSFET and GaN HEMT to electron radiation. -
Vertical Schottky diode on (113) oriented homoepitaxial diamond
Autor: Hazdra P.; Laposa A.; Šobáň Z.; Alam M.; Povolný V.; Mortet V.
(Elsevier Science, 2024)The article presents for the first time vertical Schottky diodes which were fabricated on (113) oriented diamond substrates produced from thick heavily boron-doped diamond layers grown on high-pressure high-temperature ...