Pseudo-vertical Schottky diode with ruthenium contacts on (113) boron-doped homoepitaxial diamond layers
Typ dokumentu
článek v časopisejournal article
Peer-reviewed
publishedVersion
Autor
Hazdra P.
Laposa A.
Šobáň Z.
Kroutil J.
Lambert N.
Povolný V.
Taylor A.
Mortet V.
Práva
closedAccessMetadata
Zobrazit celý záznamAbstrakt
In this article, the electrical properties of pseudo-vertical Schottky barrier diodes (pVSBDs) prepared on (113)–oriented boron-doped diamond layers using ruthenium for both the ohmic and Schottky contacts were investigated.
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Kolekce
- Publikační činnost ČVUT [1323]