Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode
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článek v časopisejournal article
Peer-reviewed
publishedVersion
Autor
Vobecký J.
Hazdra P.
Popelka S.
Sharma R.
Práva
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The ON-state characteristics of a 1.7-kV 4H–SiC junction barrier Schottky diode were studied after 4.5-MeV electron irradiation. Irradiation doses were chosen to cause a light, strong, and full doping compensation of an epitaxial layer. The diodes were characterized using Deep Level Transient Spectroscopy, C–V(T), and I–V measurements without postirradiation annealing. The calibration of model parameters of a
device simulator, which reflects the unique defect structure caused by the electron irradiation, was verified up to 2000 kGy. The quantitative agreement between simulation and measurement requires: 1) the Shockley–Read–Hall model with at least two deep levels on the contrary to ion irradiation and 2) a new model for enhanced mobility degradation due to radiation defects. The diode performance at high electron fluences is shown to be limited by the doping compensation at the epitaxial layer.
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- Publikační činnost ČVUT [1369]