Vertical Schottky diode on (113) oriented homoepitaxial diamond
Typ dokumentu
článek v časopisejournal article
Peer-reviewed
publishedVersion
Autor
Hazdra P.
Laposa A.
Šobáň Z.
Alam M.
Povolný V.
Mortet V.
Práva
closedAccessMetadata
Zobrazit celý záznamAbstrakt
The article presents for the first time vertical Schottky diodes which were fabricated on (113) oriented diamond substrates produced from thick heavily boron-doped diamond layers grown on high-pressure high-temperature grown synthetic Ib diamond crystals. Characteristics of realized diodes, which are fully comparable to those of Schottky-pn diodes prepared on (111) oriented boron-doped diamond, confirm the suitability of (113) orientation for realization of vertical diamond power devices.
Zobrazit/ otevřít
Kolekce
- Publikační činnost ČVUT [1331]