Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models
Typ dokumentu
stať ve sborníkuconference paper
Peer-reviewed
publishedVersion
Autor
Hazdra P.
Popelka S.
Práva
closedAccessMetadata
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Compact simulation models of two key silicon carbide power components, the Junction
Barrier Schottky diode and the power MOSFET, which are taking into account the effect of irradiation by high-energy electrons are presented.
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Kolekce
- Publikační činnost ČVUT [1325]