Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers
Typ dokumentu
článek v časopisejournal article
Peer-reviewed
publishedVersion
Autor
Hazdra P.
Laposa A.
Šobáň Z.
Taylor A.
Lambert N.
Povolný V.
Kroutil J.
Gedeonová Z.
Hubík P.
Mortet V.
Práva
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The article reports for the first time about the successful fabrication of pseudo-vertical diodes on {113} oriented homoepitaxial boron-doped diamond using molybdenum as a metal for both the Schottky and ohmic contacts. Results confirm that the use of {113} oriented homoepitaxial boron-doped diamond for the fabrication of high-temperature power devices is advantageous, as it enables high-quality Schottky and ohmic contacts.
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Kolekce
- Publikační činnost ČVUT [1323]