Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers

Abstract

The article reports for the first time about the successful fabrication of pseudo-vertical diodes on {113} oriented homoepitaxial boron-doped diamond using molybdenum as a metal for both the Schottky and ohmic contacts. Results confirm that the use of {113} oriented homoepitaxial boron-doped diamond for the fabrication of high-temperature power devices is advantageous, as it enables high-quality Schottky and ohmic contacts.