Browsing Archiv DOI by Title

Now showing items 29-35 of 35

    • Seminář jaderného inženýrství 2021 - sborník příspěvků 

      Author: Novák, Ondřej
      (České vysoké učení technické v Praze, 2021)

    • A Simulation study of 6.5kV Gate Controlled Diode 

      Author: Gurunath Vishwamitra Yoganath; Quang Tien Tran; Eckel, Hans-Günter
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      Gate Controlled Diode (GCD) with micro-pattern trench structure, allows charge carrier modulation at the anode region by gate control. This is utilized to operate the diode at low saturation mode and ...

    • Singular Point Source MOS (S-MOS) Cell Concept 

      Author: Rahimo, Munaf T. A.; Nistor, Iulian; Green, David
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      A Singular Point Source MOS (S-MOS) cell concept suitable for power semiconductor MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the manner by which the total channel ...

    • Structure-Aware Compact Thermal Models of Power LEDs 

      Author: Kuźniak, K.; Szymańska, K.; Starzak, Ł.; Janicki, M.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      This paper based on the example of white power LEDs illustrates the methodology for the generation of device compact thermal models, whose element values can be assigned physical meaning. The diode ...

    • Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness 

      Author: Madhu-Lakshman Mysore; Basler, T.; Lutz, J.; Baburske, R.; Schulze, H.-J.; Niedernostheide, Franz-Josef
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is investigated. The application of the recently proposed injection enhanced floating emitter (IEFE) concept ...

    • TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices 

      Author: Lachichi, A.; Mawby, P.
      (České vysoké učení technické v Praze. České centrum IET, 2021)
      TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices A. Lachichi and P. Mawby, School of Engineering University of Warwick. Coventry, United Kingdom Abstract Reliability and performance ...

    • THE INDICATIVE APPROACH TO STUDYING CREDIT POTENTIAL OF A REGIONAL BANKING SYSTEM 

      Author: Zotova, A.; Sviridov, O.; Davydenko, I.
      (Willenberg Foundation - CTU, 2014)
      The paper analyses the traditional (institutional) approach and the indicative approach to evaluating the state and efficiency of a regional system for crediting legal entities in a federal district. The authors propose ...