Prohlížení Publikační činnost - 13113 dle autora "Papež, V."
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Capacitive methodes for testing of power semiconductor devices
Autor: Papež, V.; Hájek, J.; Kopecký, B.
(2015)Electrical capacity of power semiconductor devices is quite an important parameter that can be utilized not only for testing a component itself, but it can also be applied practically; e.g. in series-connected high voltage ... -
Conditions of Temperature and Time Instability Occurrence of Reverse-Biased Semiconductor Power Devices
Autor: Kojecký, B.; Papež, V.; Šámal, D.
(2006)An investigation of the boundary states of power semiconductor devices is important with respect to their function reliability. Focus of this article is based on the evaluation of transient temperature increasing of ... -
An evaluation of the influence of a magnetic field on a human subject with the use of bio-impedance
Autor: Papežová, S.; Papež, V.
(2010)The influence of a magnetic field on a living human organism was monitored using a bio-impedance evaluation of vasodilatation effects. A quantitative evaluation of the influence of a magnetic field on a human being was ... -
Influence of Intermetallic Compounds on RF Resistance of Joints Soldered with Lead Free Alloys
Autor: Podzemský, J.; Papež, V.; Urbánek, J.; Dušek, K.
(2012)During soldering process intermetallic compounds as a reaction between solder and substrate are created. Physical properties of those compounds are different to properties of solder and substrate. The influence ... -
OCVD Carrier Lifetime in P+NN+ Diode Structures With Axial Carrier Lifetime Gradient
Autor: Benda, V.; Černík, M.; Papež, V.
(2006)The OCVD (open circuit voltage decay) method is the generally used method for the determining of carrier lifetime in the structures of semiconductor devices. This paper is focused on power diode (PCNNC) structures, in ... -
Transient Effects on High Voltage Diode Stack under Reverse Bias
Autor: Papež, V.; Kojecký, B.; Kožíšek, J.; Hejhal, J.
(2003)This article deals with a description and analysis of the fast transient processes which can occur during a local non-destructive breakdown in a circuit arranged by serial connection of reverse biased high-voltage silicon ...