Transient Effects on High Voltage Diode Stack under Reverse Bias

Abstract

This article deals with a description and analysis of the fast transient processes which can occur during a local non-destructive breakdown in a circuit arranged by serial connection of reverse biased high-voltage silicon diodes. The existence of the non-destructive breakdown was observed at some measurements of reverse current-voltage characteristics of individual diodes. However, the study of this phenomenon is very difficult for many serial connected diodes in stack. That is why, a physical model was created for reflection of individual local breakdown in this case. Validity of this model was verified by means of circuit simulation of the investigated process. Further, statistical significance of this process was considered with respect to reliability and lifetime of high-voltage diode stack (HVDS).