Prohlížení Publikační činnost - 13113 dle autora "Kojecký, B."
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Conditions of Temperature and Time Instability Occurrence of Reverse-Biased Semiconductor Power Devices
Autor: Kojecký, B.; Papež, V.; Šámal, D.
(2006)An investigation of the boundary states of power semiconductor devices is important with respect to their function reliability. Focus of this article is based on the evaluation of transient temperature increasing of ... -
Reliability of Reverse Properties of Power Semiconductor Devices: Influence of Surface Dielectric Layer and its Experimental Verification
Autor: Papež, Václav; Kojecký, B.; Šámal, D.
(2008)Reliability of reverse properties of power semiconductor devices is an important condition for their practical application. Usual standard tests do not reveal total information concerning the technological genetic aspects ... -
Transient Effects on High Voltage Diode Stack under Reverse Bias
Autor: Papež, V.; Kojecký, B.; Kožíšek, J.; Hejhal, J.
(2003)This article deals with a description and analysis of the fast transient processes which can occur during a local non-destructive breakdown in a circuit arranged by serial connection of reverse biased high-voltage silicon ...