• Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth 

      Autor: Mortet V.; Taylor A.; Davydova M.; Jiránek J.; Fekete L.; Klimša L.; Šimek D.; Lambert N.; Sedláková S.; Kopeček J.; Hazdra P.
      (Elsevier Science, 2022)
      The article deals with the growth of boron-doped diamond on substrates with a misorientation angle from 0 to 90°. The variation of the boron incorporation over two decades with the misorientation angle of the substrate is ...
    • Inkjet Seeded CVD-Grown Hydrogenated Diamond Gas Sensor Under UV-LED Illumination 

      Autor: Laposa A.; Kroutil J.; Davydova M.; Taylor A.; Voves J.; Klimsa L.; Kopecek J.; Husák M.
      (IEEE Sensors Council, 2020)
      Hydrogen-terminated diamond gas sensors have been prepared by selective deposition of nanodiamond ink using direct inkjet printing on interdigital electrodes, followed by chemical vapor deposition growth of a nanoctrystalline ...
    • Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers 

      Autor: Hazdra P.; Laposa A.; Šobáň Z.; Voves J.; Lambert N.; Davydova M.; Povolný V.; Taylor A.; Mortet V.
      (Elsevier Science, 2022)
      Refractory metals (titanium, molybdenum, and zirconium) with a gold overlayer were used to form ohmic contacts on {113}-oriented boron-doped diamond epitaxial layers. Morphology and thickness of deposited layers were ...
    • Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers 

      Autor: Hazdra P.; Laposa A.; Šobáň Z.; Voves J.; Lambert N.; Davydova M.; Povolný V.; Taylor A.; Mortet V.
      (Elsevier Science, 2022)
      Refractory metals (titanium, molybdenum, and zirconium) with a gold overlayer were used to form ohmic contacts on {113}-oriented boron doped diamond epitaxial layers (boron concentration ranging from 1019 to 1021 cm−3). ...
    • Power Diode Structures Realized on (113) oriented Boron Doped Diamond 

      Autor: Hazdra P.; Laposa A.; Šobáň Z.; Povolný V.; Voves J.; Lambert N.; Taylor A.; Mortet V.
      (České centrum Institution of Engineering and Technology, 2023)
      The article deals with the preparation and characterization of ohmic contacts, pseudo-vertical, and vertical Schottky barrier diodes on (113) oriented boron doped diamond.
    • Properties of boron-doped (113) oriented homoepitaxial diamond layers 

      Autor: Mortet V.; Taylor A.; Lambert N.; Gedeonová Z.; Fekete L.; Lorinčík J.; Klimša L.; Kopeček J.; Hubík P.; Šobáň Z.; Laposa A.; Davydova M.; Voves J.; Pošta A.; Povolný V.; Hazdra P.
      (Elsevier Science, 2021)
      Although significant efforts have been dedicated to optimize the quality of epitaxial diamond layers, reported properties of diamond based electronic devices do not yet approach expected theoretical values. Recent works ...
    • Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers 

      Autor: Hazdra P.; Laposa A.; Šobáň Z.; Taylor A.; Lambert N.; Povolný V.; Kroutil J.; Gedeonová Z.; Hubík P.; Mortet V.
      (Elsevier Science, 2022)
      The article reports for the first time about the successful fabrication of pseudo-vertical diodes on {113} oriented homoepitaxial boron-doped diamond using molybdenum as a metal for both the Schottky and ohmic contacts. ...
    • Pseudo-vertical Schottky diode with ruthenium contacts on (113) boron-doped homoepitaxial diamond layers 

      Autor: Hazdra P.; Laposa A.; Šobáň Z.; Kroutil J.; Lambert N.; Povolný V.; Taylor A.; Mortet V.
      (WILEY-V C H VERLAG GMBH, 2023)
      In this article, the electrical properties of pseudo-vertical Schottky barrier diodes (pVSBDs) prepared on (113)–oriented boron-doped diamond layers using ruthenium for both the ohmic and Schottky contacts were investigated.