Now showing items 1-6 of 6

    • Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth 

      Author: Mortet V.; Taylor A.; Davydova M.; Jiránek J.; Fekete L.; Klimša L.; Šimek D.; Lambert N.; Sedláková S.; Kopeček J.; Hazdra P.
      (Elsevier Science, 2022)
      The article deals with the growth of boron-doped diamond on substrates with a misorientation angle from 0 to 90°. The variation of the boron incorporation over two decades with the misorientation angle of the substrate is ...
    • Inkjet Seeded CVD-Grown Hydrogenated Diamond Gas Sensor Under UV-LED Illumination 

      Author: Laposa A.; Kroutil J.; Davydova M.; Taylor A.; Voves J.; Klimsa L.; Kopecek J.; Husák M.
      (IEEE Sensors Council, 2020)
      Hydrogen-terminated diamond gas sensors have been prepared by selective deposition of nanodiamond ink using direct inkjet printing on interdigital electrodes, followed by chemical vapor deposition growth of a nanoctrystalline ...
    • Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers 

      Author: Hazdra P.; Laposa A.; Šobáň Z.; Voves J.; Lambert N.; Davydova M.; Povolný V.; Taylor A.; Mortet V.
      (Elsevier Science, 2022)
      Refractory metals (titanium, molybdenum, and zirconium) with a gold overlayer were used to form ohmic contacts on {113}-oriented boron-doped diamond epitaxial layers. Morphology and thickness of deposited layers were ...
    • Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers 

      Author: Hazdra P.; Laposa A.; Šobáň Z.; Voves J.; Lambert N.; Davydova M.; Povolný V.; Taylor A.; Mortet V.
      (Elsevier Science, 2022)
      Refractory metals (titanium, molybdenum, and zirconium) with a gold overlayer were used to form ohmic contacts on {113}-oriented boron doped diamond epitaxial layers (boron concentration ranging from 1019 to 1021 cm−3). ...
    • Properties of boron-doped (113) oriented homoepitaxial diamond layers 

      Author: Mortet V.; Taylor A.; Lambert N.; Gedeonová Z.; Fekete L.; Lorinčík J.; Klimša L.; Kopeček J.; Hubík P.; Šobáň Z.; Laposa A.; Davydova M.; Voves J.; Pošta A.; Povolný V.; Hazdra P.
      (Elsevier Science, 2021)
      Although significant efforts have been dedicated to optimize the quality of epitaxial diamond layers, reported properties of diamond based electronic devices do not yet approach expected theoretical values. Recent works ...
    • Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers 

      Author: Hazdra P.; Laposa A.; Šobáň Z.; Taylor A.; Lambert N.; Povolný V.; Kroutil J.; Gedeonová Z.; Hubík P.; Mortet V.
      (Elsevier Science, 2022)
      The article reports for the first time about the successful fabrication of pseudo-vertical diodes on {113} oriented homoepitaxial boron-doped diamond using molybdenum as a metal for both the Schottky and ohmic contacts. ...