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CORPORATE SOCIAL RESPONSIBILITY: THE MAIN FORMS AND THE ROLE IN SOCIAL-AND-ECONOMIC POLICY
(Willenberg Foundation - CTU, 2014)
The paper analyzes the main forms and the role of corporate social responsibility
in social-and-economic policy. The author studied various forms of conducting social-andeconomic
policy and was able to prove that under ...
Measuring Transient I/V Turn-On Behavior of a Power MOSFET without a Current Sensor
(České vysoké učení technické v Praze. České centrum IET, 2021)
Double pulse test (DPT) is usually used to characterize and verify turn-on/turn-off operation of power
switches. Yet, new high frequency switching devices based on SiC and GaN technologies require much
more elaborate ...
Scalable Vertical GaN FETs (SV- GaN FETs) for Low Voltage Applications
(České vysoké učení technické v Praze. České centrum IET, 2021)
This is the first report on a novel multi-polarization channel applied to realize normally-off and high-
performance vertical GaN device devices for low voltage applications. This structure is made with 2DHG ...
Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach
(České vysoké učení technické v Praze. České centrum IET, 2021)
Fast-recovery diodes can exhibit negative differential resistance during reverse recovery which is associated
with the formation of current filaments triggered by the presence of inhomogeneities along the ...
Development of an HBM-ESD tester for power semiconductor devices
(České vysoké učení technické v Praze. České centrum IET, 2021)
Recently, the human body model - electrostatic discharge (HBM-ESD) test capability for power diodes
was introduced among the requirements in the field of automotive include for a superior reliability. ...
Fast Short Circuit Type I Detection Method based on VGE-Monitoring
(České vysoké učení technické v Praze. České centrum IET, 2021)
In this paper, a Short Circuit type I detection method based on the monitoring of the gate voltage is
investigated. The proposed detection principle relies on an existing method, which was ...
Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness
(České vysoké učení technické v Praze. České centrum IET, 2021)
In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is
investigated. The application of the recently proposed injection enhanced floating emitter (IEFE)
concept ...
New method for Si-wafer resistivity determination
(České vysoké učení technické v Praze. České centrum IET, 2021)
Wafer resistivity is one of the most important parameters in production of Power Semiconductor
Devices (PSD). This parameter is mainly responsible for achieving required breakdown voltage and ...
EUROPEAN LIBERALIZM AND RUSSIAN ECONOMY – DRAMA OR UNREQUITED LOVE?
(Willenberg Foundation - CTU, 2014)
Parylene as Coating for Power Semiconductor Devices
(České vysoké učení technické v Praze. České centrum IET, 2021)
The introduction of wide band gap semiconductor devices leads to smaller package sizes, higher power densities
and higher switching frequencies, which is advantageous compared to the power electronics based ...