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The influence of electrical stress on the distribution of electrically active defects in IGBT
(České vysoké učení technické v Praze. České centrum IET, 2021)
This paper highlights electrically active defects investigation of the sixth generation 1200 V trench stop
silicon-based Insulated Gate Bipolar Transistors by Deep Level Transient Fourier Spectroscopy. The ...
Degradation of 600V GaN HEMTs under Repetitive Short Circuit Conditions
(České vysoké učení technické v Praze. České centrum IET, 2021)
This paper descirbes impact of repetitive short-circuit stress on commercially available 600V e-mode
GaN HEMTs with p-GaN gate. The devices were subjected to up to 105 short circuit stress cycles at 100V
and ...
Key criteria for the short-circuit capability of IGBTs
(České vysoké učení technické v Praze. České centrum IET, 2021)
Short-circuit behavior and capability are investigated and optimized during IGBT development. Thereby,
knowledge about destruction and high-frequency short-circuit oscillation mechanisms is needed. For the
thermal ...
TCAD Simulation of the Bipolar Degradation in SiC MOSFET Power Devices
(České vysoké učení technické v Praze. České centrum IET, 2021)
TCAD Simulation of the Bipolar Degradation in SiC MOSFET
Power Devices
A. Lachichi and P. Mawby, School of Engineering
University of Warwick.
Coventry, United Kingdom
Abstract
Reliability and performance ...
Experimental Comparison of a New SAG-IGBT and Conventional DAG-IGBT Structures with LTO Design in terms of Turn-on Performance
(České vysoké učení technické v Praze. České centrum IET, 2021)
n this paper, we compare a new Single Active Gate Trench IGBT(SAG-IGBT) with the conventional
Double Active Trench Gate IGBT (DAG-IGBT) structures with the LTO (LOCOS Trench Oxide)
technology. ...
A Simulation study of 6.5kV Gate Controlled Diode
(České vysoké učení technické v Praze. České centrum IET, 2021)
Gate Controlled Diode (GCD) with micro-pattern trench structure, allows charge carrier modulation at
the anode region by gate control. This is utilized to operate the diode at low saturation mode and ...
Seminář jaderného inženýrství 2021 - sborník příspěvků
(České vysoké učení technické v Praze, 2021)
THE INDICATIVE APPROACH TO STUDYING CREDIT POTENTIAL OF A REGIONAL BANKING SYSTEM
(Willenberg Foundation - CTU, 2014)
The paper analyses the traditional (institutional) approach and the indicative
approach to evaluating the state and efficiency of a regional system for crediting legal entities
in a federal district. The authors propose ...
INNOVATIVE ELECTRONIC-REMOTE FORMS OF BANKING SERVICES
(Willenberg Foundation - CTU, 2014)
The paper analyses specifics of financial innovations in the form of electronicremote
forms of obtaining banking services that improve flexibility and mobility of customer
access to the funds, customer-bank interoperability, ...
REGIONAL ECONOMIC POLICY WITH NREFERENCES TO GLOBALIZATION
(Willenberg Foundation - CTU, 2014)
The paper analyses the problems of developing and conducting re-gional economic
policy influenced by the factors of globalization. The authors focus on two key aspects of
global integration of Russian regions: diversifica-tion ...