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dc.contributor.authorMach, P.
dc.contributor.authorRozkošný, T.
dc.date.accessioned2012-07-04T06:45:38Z
dc.date.available2012-07-04T06:45:38Z
dc.date.issued2005-05
dc.identifier.citationMach, P. - Rozkošný, T. Processing of Alumina Nano-films. In: ISSE 2005 Proceeding. New York: IEEE Computer Society Press, 2005, p. 1-5. ISBN 0-7803-9324-4.cze
dc.identifier.urihttp://hdl.handle.net/10467/9601
dc.description.abstractThere are different technologies for processing of alumina thin films. It has been found that only some of them are usable for reliable and reproducible processing of nano-films with the thickness of 2 through 3 nm. Such the films are used for fabrication of tunneling junctions with high sensitivity to humidity, which can be used for fabrication of humidity sensors. The alumina films are mostly prepared on evaporated or sputtered aluminum electrode by oxidization. Quality of tunneling junctions with alumina tunneling barrier fabricated of air-oxidized, oxygen-oxidized and oxygen plasma-oxidized Al electrodes has been examined by the measurement of resistances and capacitances of the junctions. Sensitivity of the junctions to external humidity has been examined, too. It has been found that the best technology for fabrication of alumina nano-films is plasmatic oxidation of aluminum evaporated thin films. It has been also found that the alumina nano-thin films are very sensitive to humidity.eng
dc.language.isocescze
dc.publisherIEEEcze
dc.rights© 2005 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.eng
dc.titleProcessing of Alumina Nano-filmscze
dc.typepříspěvek z konference - elektronickýcze
dc.identifier.doi10.1109/ISSE.2005.1490991


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