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dc.contributor.authorMach, Pavel
dc.contributor.authorKolářová, Jana
dc.date.accessioned2012-07-02T14:03:15Z
dc.date.available2012-07-02T14:03:15Z
dc.date.issued2004-05
dc.identifier.citationMach, P. - Kolářová, J. Fabrication of Al2O3 and AlN Thin Films by Reactive Sputtering and Optimization Using DOE. In: 27th International Spring Seminar on Electronics Technology. New York: IEEE, 2004, p. 304-308. ISBN 0-7803-8422-9.cze
dc.identifier.urihttp://hdl.handle.net/10467/9586
dc.description.abstractThin films of Al2O3 and AlN have been fabricated by reactive sputtering using magnetron sputtering equipment. A mixture of Ar and O2 has been used for the fabrication of Al2O3 films, and a mixture of Ar and N2 has been used for the fabrication of AlN films. Optimization of the fabrication process has been carried out using DOE (design of experiments). Experiments of the type 23 have been used for creating mathematical models of sputtering processes. The results calculated from the models have been compared with the results obtained during the fabrication process. It has been found that there is very good coincidence between the results calculated from the mathematical model and measured on fabricated layers.eng
dc.language.isocescze
dc.publisherIEEEcze
dc.rights© 2004 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.eng
dc.subjectthin filmseng
dc.subjectPVDeng
dc.subjectmagnetron sputreringeng
dc.subjectreactive sputteringeng
dc.subjectAl2O3 thin filmseng
dc.subjectAIN thin filmseng
dc.titleFabrication of AI203 and AIN thin films by reactive sputtering and its optimization using DOEcze
dc.typepříspěvek z konference - tištěnýcze
dc.identifier.doi10.1109/ISSE.2004.1490440


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