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dc.contributor.authorMach, Pavel
dc.contributor.authorKolářová, Jana
dc.date.accessioned2012-08-03T07:31:39Z
dc.date.available2012-08-03T07:31:39Z
dc.date.issued2009-05
dc.identifier.citationMach, P. - Kolářová, J. Design of Experiments of AlN Reactive Sputtering. In: 32nd ISSE 2009 Proceedings [CD-ROM]. Brno: VUT v Brně, FEI, 2009, ISBN 978-1-4244-4260-7.cze
dc.identifier.urihttp://hdl.handle.net/10467/12413
dc.description.abstractReactive sputtering has been used for fabrication of AlN films. The process has been investigated in two levels of power of a generator, in two levels of the working pressure and in two levels of the working gas flow. The AlN films have been fabricated on a bottom Al electrodes and after sputtering of the AlN film a top Al electrode has been evaporated across the bottom one. This way capacitors have been formed. The capacitance and the loss factor of these capacitors have been measured. The process of fabrication of AlN films has been mathematically described using DOE.eng
dc.language.isocescze
dc.publisherIEEEcze
dc.rights© 2009 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.eng
dc.titleDesign of Experiments of AlN Reactive Sputteringcze
dc.typepříspěvek z konference - elektronickýcze
dc.identifier.doi10.1109/ISSE.2009.5206938


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