Hledat
Zobrazují se záznamy 31-35 z 35
High-Voltage IGBT turn-off at transition from overcurrent to desaturation
(České vysoké učení technické v Praze. České centrum IET, 2021)
The turn-off capability of a power semiconductor is normally given by the datasheet with test conditions.
The RBSOA (Reverse Bias Safe Operation Area) diagram limits the collector-emitter peak voltage and
maximum ...
Structure-Aware Compact Thermal Models of Power LEDs
(České vysoké učení technické v Praze. České centrum IET, 2021)
This paper based on the example of white power LEDs illustrates the methodology for the generation
of device compact thermal models, whose element values can be assigned physical meaning. The diode ...
Singular Point Source MOS (S-MOS) Cell Concept
(České vysoké učení technické v Praze. České centrum IET, 2021)
A Singular Point Source MOS (S-MOS) cell concept suitable for power semiconductor MOS based
devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the manner by
which the total channel ...
Power device solutions for highly efficient power supplies
(České vysoké učení technické v Praze. České centrum IET, 2021)
Switched mode power supplies (SMPS) for target applications covering a wide range from telecom
rectifiers through servers to solar inverters or electric vehicle chargers share the need for high ...
Commercial Sweet Spots for GaN and CMOS Integration by Micro-Transfer-Printing
(České vysoké učení technické v Praze. České centrum IET, 2021)
Several approaches for close integration of power switches with CMOS logic are subject of technical
evaluations and academic discussions. This paper identifies the commercially relevant processing
steps of ...