Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth
Type of document
článek v časopisejournal article
Peer-reviewed
publishedVersion
Author
Mortet V.
Taylor A.
Davydova M.
Jiránek J.
Fekete L.
Klimša L.
Šimek D.
Lambert N.
Sedláková S.
Kopeček J.
Hazdra P.
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The article deals with the growth of boron-doped diamond on substrates with a misorientation angle from 0 to 90°. The variation of the boron incorporation over two decades with the misorientation angle of the substrate is observed.
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