Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth

Mortet V.; Taylor A.; Davydova M.; Jiránek J.; Fekete L.; Klimša L.; Šimek D.; Lambert N.; Sedláková S.; Kopeček J.; Hazdra P.

Typ dokumentu

článek v časopise
journal article
Peer-reviewed
publishedVersion

Autor

Mortet V.

Taylor A.

Davydova M.

Jiránek J.

Fekete L.

Klimša L.

Šimek D.

Lambert N.

Sedláková S.

Kopeček J.

Hazdra P.

Práva

closedAccess

Metadata

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Abstrakt

The article deals with the growth of boron-doped diamond on substrates with a misorientation angle from 0 to 90°. The variation of the boron incorporation over two decades with the misorientation angle of the substrate is observed.