Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth
Typ dokumentu
článek v časopisejournal article
Peer-reviewed
publishedVersion
Autor
Mortet V.
Taylor A.
Davydova M.
Jiránek J.
Fekete L.
Klimša L.
Šimek D.
Lambert N.
Sedláková S.
Kopeček J.
Hazdra P.
Práva
closedAccessMetadata
Zobrazit celý záznamAbstrakt
The article deals with the growth of boron-doped diamond on substrates with a misorientation angle from 0 to 90°. The variation of the boron incorporation over two decades with the misorientation angle of the substrate is observed.
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Kolekce
- Publikační činnost ČVUT [1370]