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dc.contributor.authorMortet V.
dc.contributor.authorTaylor A.
dc.contributor.authorDavydova M.
dc.contributor.authorJiránek J.
dc.contributor.authorFekete L.
dc.contributor.authorKlimša L.
dc.contributor.authorŠimek D.
dc.contributor.authorLambert N.
dc.contributor.authorSedláková S.
dc.contributor.authorKopeček J.
dc.contributor.authorHazdra P.
dc.date.accessioned2022-04-11T10:36:21Z
dc.date.available2022-04-11T10:36:21Z
dc.date.issued2022
dc.identifierV3S-357708
dc.identifier.citationMORTET, V., et al. Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth. Diamond and Related Materials. 2022, 122 ISSN 0925-9635. DOI 10.1016/j.diamond.2022.108887.
dc.identifier.issn0925-9635 (print)
dc.identifier.issn1879-0062 (online)
dc.identifier.urihttp://hdl.handle.net/10467/100536
dc.description.abstractThe article deals with the growth of boron-doped diamond on substrates with a misorientation angle from 0 to 90°. The variation of the boron incorporation over two decades with the misorientation angle of the substrate is observed.eng
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherElsevier Science
dc.relation.ispartofDiamond and Related Materials
dc.subjectDiamondeng
dc.subjectBoron-dopingeng
dc.subjectSubstrate crystallographic orientationeng
dc.subjectPlasma-enhanced chemical vapor depositioneng
dc.titleEffect of substrate crystalline orientation on boron-doped homoepitaxial diamond growtheng
dc.typečlánek v časopisecze
dc.typejournal articleeng
dc.identifier.doi10.1016/j.diamond.2022.108887
dc.relation.projectidinfo:eu-repo/grantAgreement/Czech Science Foundation/GA/GA20-11140S/CZ/Essential Elements of Diamond Power Electronics/
dc.relation.projectidinfo:eu-repo/grantAgreement/Ministry of Education, Youth and Sports/LM/90110/CZ/CzechNanoLab - Výzkumná infrastruktura CzechNanoLab - LM2018110 (2020–2022)/CzechNanoLab
dc.rights.accessclosedAccess
dc.type.statusPeer-reviewed
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-85124102278


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