Prohlížení Archiv DOI dle autora "Faraga, J."
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The influence of electrical stress on the distribution of electrically active defects in IGBT
Autor: Drobný, J.; Marek, J.; Chvála, A.; Faraga, J.; Jagelka, M.; Stuchlíková, L.
(České vysoké učení technické v Praze. České centrum IET, 2021)This paper highlights electrically active defects investigation of the sixth generation 1200 V trench stop silicon-based Insulated Gate Bipolar Transistors by Deep Level Transient Fourier Spectroscopy. The ...