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Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models



dc.contributor.authorHazdra P.
dc.contributor.authorPopelka S.
dc.date.accessioned2020-03-17T10:27:09Z
dc.date.available2020-03-17T10:27:09Z
dc.date.issued2019
dc.identifierV3S-332163
dc.identifier.citationHAZDRA, P. and S. POPELKA. Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models. In: GAMMON, P.M., et al., eds. Silicon Carbide and Related Materials 2018. 12th European Conference on Silicon Carbide and Related Materials, Birmingham, 2018-09-02/2018-09-06. Uetikon-Zurich: Trans Tech Publications, 2019. p. 718-721. Materials Science Forum. vol. 963. ISSN 0255-5476. ISBN 978-3-0357-1332-9. DOI 10.4028/www.scientific.net/MSF.963.718.
dc.identifier.isbn978-3-0357-1332-9 (print)
dc.identifier.issn0255-5476 (print)
dc.identifier.urihttp://hdl.handle.net/10467/87097
dc.description.abstractCompact simulation models of two key silicon carbide power components, the Junction Barrier Schottky diode and the power MOSFET, which are taking into account the effect of irradiation by high-energy electrons are presented.eng
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherTrans Tech Publications
dc.relation.ispartofSilicon Carbide and Related Materials 2018
dc.relation.urihttps://www.scientific.net/Paper/Preview/540543
dc.subjectsilicon carbideeng
dc.subjectpower deviceseng
dc.subjectirradiationeng
dc.subjectcompact simulation modelseng
dc.titleRadiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Modelseng
dc.typestať ve sborníkucze
dc.typeconference papereng
dc.identifier.doi10.4028/www.scientific.net/MSF.963.718
dc.relation.projectidinfo:eu-repo/grantAgreement/EC/OK7X/NMP3-LA-2013-604057/EU/Silicon Carbide Power Electronics Technology for Energy Efficient Devices/SPEED
dc.rights.accessclosedAccess
dc.type.statusPeer-reviewed
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-85071834482
dc.relation.conference12th European Conference on Silicon Carbide and Related Materials


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