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dc.contributor.authorHolovský J.
dc.contributor.authorBallif C.
dc.date.accessioned2019-03-27T22:30:51Z
dc.date.available2019-03-27T22:30:51Z
dc.date.issued2014
dc.identifierV3S-225012
dc.identifier.citationHOLOVSKÝ, J. and C. BALLIF. Thin-film limit formalism applied to surface defect absorption. Optics Express. 2014, 22(25), 31466-31472. ISSN 1094-4087. DOI 10.1364/OE.22.031466.
dc.identifier.issn1094-4087 (print)
dc.identifier.urihttp://hdl.handle.net/10467/81579
dc.description.abstractThe thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of ultrathin defective layer e.g. on a top of a layer of amorphous silicon. We develop a new method of direct evaluation of the surface defective layer and the bulk defects. Applying this method to amorphous silicon on glass, we show that the surface defective layer differs from bulk amorphous silicon in terms of light soaking.eng
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherOptical Society of America
dc.relation.ispartofOptics Express
dc.relation.urihttp://www.opticsinfobase.org/oe/abstract.cfm?uri=oe-22-25-31466
dc.subjectthin filmseng
dc.subjectoptical propertieseng
dc.subjectabsorptioneng
dc.titleThin-film limit formalism applied to surface defect absorptioneng
dc.typečlánek v časopisecze
dc.typejournal articleeng
dc.identifier.doi10.1364/OE.22.031466
dc.rights.accessopenAccess
dc.identifier.wos000346368800141
dc.type.statusPeer-reviewed
dc.type.versionpublishedVersion
dc.identifier.scopus2-s2.0-84919682651


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