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Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices
(WILEY-V C H VERLAG GMBH, 2021)
The effect of radiation damage on the minority carrier lifetime in the 4 H-SiC epilayers forming the n-base of the power p-i-n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and ...