Prohlížení Publikační činnost ČVUT dle předmětu "silicon carbide"
Zobrazují se záznamy 1-5 z 5
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Optimization of SiC Power p-i-n Diode Parameters by Proton Irradiation
(IEEE, 2018)Local lifetime reduction by proton irradiation was used to optimize static and dynamic parameters of a 10 kV SiC p-i-n diode. Carrier lifetime was reduced locally at the anode side by irradiation with 800 keV protons at ... -
Radiation Defects and Carrier Lifetime in 4H-SiC Bipolar Devices
(WILEY-V C H VERLAG GMBH, 2021)The effect of radiation damage on the minority carrier lifetime in the 4 H-SiC epilayers forming the n-base of the power p-i-n diodes is presented. Irradiation with fast neutrons and MeV protons is used for uniform and ... -
Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV
(WILEY-V C H VERLAG GMBH, 2019)Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Junction Barrier Schottky power SiC diodes were irradiated with 1.05, 2.1, 5 and 10 MeV electrons with doses up to 600 kGy. ... -
Radiation Effects on 1.7kV Class 4H-SiC Power Devices: Development of Compact Simulation Models
(Trans Tech Publications, 2019)Compact simulation models of two key silicon carbide power components, the Junction Barrier Schottky diode and the power MOSFET, which are taking into account the effect of irradiation by high-energy electrons are presented. -
Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes
(IEEE, 2021)The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy ...