Prohlížení Publikační činnost ČVUT dle předmětu "ruthenium"

Zobrazují se záznamy 1-2 z 2

    • Power Diode Structures Realized on (113) oriented Boron Doped Diamond 

      Autor: Hazdra P.; Laposa A.; Šobáň Z.; Povolný V.; Voves J.; Lambert N.; Taylor A.; Mortet V.
      (České centrum Institution of Engineering and Technology, 2023)
      The article deals with the preparation and characterization of ohmic contacts, pseudo-vertical, and vertical Schottky barrier diodes on (113) oriented boron doped diamond.

    • Pseudo-vertical Schottky diode with ruthenium contacts on (113) boron-doped homoepitaxial diamond layers 

      Autor: Hazdra P.; Laposa A.; Šobáň Z.; Kroutil J.; Lambert N.; Povolný V.; Taylor A.; Mortet V.
      (WILEY-V C H VERLAG GMBH, 2023)
      In this article, the electrical properties of pseudo-vertical Schottky barrier diodes (pVSBDs) prepared on (113)–oriented boron-doped diamond layers using ruthenium for both the ohmic and Schottky contacts were investigated.