Prohlížení Publikační činnost ČVUT dle předmětu "Silicon carbide"
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Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode
(IEEE, 2015)The ON-state characteristics of a 1.7-kV 4H–SiC junction barrier Schottky diode were studied after 4.5-MeV electron irradiation. Irradiation doses were chosen to cause a light, strong, and full doping compensation of an ...