Prohlížení Publikační činnost ČVUT dle autora "Vobecký J."
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The Bidirectional Phase Control Thyristor
Autor: Vobecký J.
(IEEE, 2020)The operational principle and design aspects of the bidirectional phase control thyristor (BiPCT) are presented. The BiPCT has been invented with the intention to replace the existing bidirectional control thyristor (BCT) ... -
Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode
Autor: Vobecký J.; Hazdra P.; Popelka S.; Sharma R.
(IEEE, 2015)The ON-state characteristics of a 1.7-kV 4H–SiC junction barrier Schottky diode were studied after 4.5-MeV electron irradiation. Irradiation doses were chosen to cause a light, strong, and full doping compensation of an ... -
On the Performance of Multiobjective Evolutionary Algorithms in Automatic Parameter Extraction of Power Diodes
Autor: Prada D.; Bellini M.; Stevanovic I.; Lemaitre L.; Victory J.; Vobecký J.; Sacco R.; Lauritzen P. O.
(IEEE Press, 2015)A general, robust, and automatic parameter extraction of nonlinear compact models is presented. The parameter extraction is based on multiobjective optimization using evolutionary algorithms which allow fitting of several ... -
Radiation Defects Created in n‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1-10 MeV
Autor: Hazdra P.; Vobecký J.
(WILEY-V C H VERLAG GMBH, 2019)Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Junction Barrier Schottky power SiC diodes were irradiated with 1.05, 2.1, 5 and 10 MeV electrons with doses up to 600 kGy. ... -
Radiation Resistance of High-Voltage Silicon and 4H-SiC Power p-i-n Diodes
Autor: Hazdra P.; Smrkovský P.; Vobecký J.; Mihaila A.
(IEEE, 2021)The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy ... -
Silicon Thyristors for Ultrahigh Power (GW) Applications (Invited Paper)
Autor: Vobecký J.; Schulze H-J.; Streit P.; Niedrenostheide F.-J.; Botan V.; Przybilla, J.; Kellner-Werdehausen U.; Bellini M.
(IEEE, 2017)Evolution of thyristor technology and the design concepts, which brought and maintain the phase control thyristor (PCT) at the top of a power pyramid, are discussed. The state-of-the-art device concepts like electrically ...