Hledat
Zobrazují se záznamy 1-6 z 6
Conditions of Temperature and Time Instability Occurrence of Reverse-Biased Semiconductor Power Devices
(2006)
An investigation of the boundary states of power semiconductor devices is important with respect to their function reliability. Focus of this
article is based on the evaluation of transient temperature increasing of ...
Transient Effects on High Voltage Diode Stack under Reverse Bias
(2003)
This article deals with a description and analysis of the fast transient processes which can occur during a local non-destructive breakdown in a circuit arranged by serial connection of reverse biased high-voltage silicon ...
OCVD Carrier Lifetime in P+NN+ Diode Structures With Axial Carrier Lifetime Gradient
(2006)
The OCVD (open circuit voltage decay) method is the generally used method for the determining of carrier lifetime in the structures of
semiconductor devices. This paper is focused on power diode (PCNNC) structures, in ...
Capacitive methodes for testing of power semiconductor devices
(2015)
Electrical capacity of power semiconductor devices is quite an important parameter that can be utilized not only for testing a component itself, but it can also be applied practically; e.g. in series-connected high voltage ...
An evaluation of the influence of a magnetic field on a human subject with the use of bio-impedance
(2010)
The influence of a magnetic field on a living human organism was monitored using a
bio-impedance evaluation of vasodilatation effects. A quantitative evaluation of the influence
of a magnetic field on a human being was ...
Influence of Intermetallic Compounds on RF Resistance of Joints Soldered with Lead Free Alloys
(2012)
During soldering process intermetallic compounds
as a reaction between solder and substrate are
created. Physical properties of those compounds are different
to properties of solder and substrate. The influence ...