The article presents for the first time vertical Schottky diodes which were fabricated on (113) oriented diamond substrates produced from thick heavily boron-doped diamond layers grown on high-pressure high-temperature grown synthetic Ib diamond crystals. Characteristics of realized diodes, which are fully comparable to those of Schottky-pn diodes prepared on (111) oriented boron-doped diamond, confirm the suitability of (113) orientation for realization of vertical diamond power devices.
eng
dc.format.mimetype
application/pdf
dc.language.iso
eng
dc.publisher
Elsevier Science
dc.relation.ispartof
Diamond and Related Materials
dc.subject
diamond
eng
dc.subject
Schottky diode
eng
dc.subject
vertical
eng
dc.subject
boron doped
eng
dc.title
Vertical Schottky diode on (113) oriented homoepitaxial diamond
info:eu-repo/grantAgreement/Czech Science Foundation/GA/GA20-11140S/CZ/Essential Elements of Diamond Power Electronics/
dc.relation.projectid
info:eu-repo/grantAgreement/Ministry of Education, Youth and Sports/LM/90251/CZ/CzechNanoLab II - Výzkumná infrastruktura CzechNanoLab - LM2023051 (2023–2026)/CzechNanoLab II