Vertical Schottky diode on (113) oriented homoepitaxial diamond
Type of document
článek v časopisejournal article
Peer-reviewed
publishedVersion
Author
Hazdra P.
Laposa A.
Šobáň Z.
Alam M.
Povolný V.
Mortet V.
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The article presents for the first time vertical Schottky diodes which were fabricated on (113) oriented diamond substrates produced from thick heavily boron-doped diamond layers grown on high-pressure high-temperature grown synthetic Ib diamond crystals. Characteristics of realized diodes, which are fully comparable to those of Schottky-pn diodes prepared on (111) oriented boron-doped diamond, confirm the suitability of (113) orientation for realization of vertical diamond power devices.
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