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Pseudo-vertical Schottky diode with ruthenium contacts on (113) boron-doped homoepitaxial diamond layers



dc.contributor.authorHazdra P.
dc.contributor.authorLaposa A.
dc.contributor.authorŠobáň Z.
dc.contributor.authorKroutil J.
dc.contributor.authorLambert N.
dc.contributor.authorPovolný V.
dc.contributor.authorTaylor A.
dc.contributor.authorMortet V.
dc.date.accessioned2023-10-31T00:42:40Z
dc.date.available2023-10-31T00:42:40Z
dc.date.issued2023
dc.identifierV3S-368808
dc.identifier.citationHAZDRA, P., et al. Pseudo-vertical Schottky diode with ruthenium contacts on (113) boron-doped homoepitaxial diamond layers. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2023, ISSN 1862-6300. DOI 10.1002/pssa.202300508.
dc.identifier.issn1862-6300 (print)
dc.identifier.issn1862-6319 (online)
dc.identifier.urihttp://hdl.handle.net/10467/112316
dc.description.abstractIn this article, the electrical properties of pseudo-vertical Schottky barrier diodes (pVSBDs) prepared on (113)–oriented boron-doped diamond layers using ruthenium for both the ohmic and Schottky contacts were investigated.eng
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherWILEY-V C H VERLAG GMBH
dc.relation.ispartofPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
dc.subjectboron dopingeng
dc.subjectcontactseng
dc.subjectdiamondseng
dc.subjectrutheniumeng
dc.subjectSchottky diodeseng
dc.titlePseudo-vertical Schottky diode with ruthenium contacts on (113) boron-doped homoepitaxial diamond layerseng
dc.typečlánek v časopisecze
dc.typejournal articleeng
dc.identifier.doi10.1002/pssa.202300508
dc.relation.projectidinfo:eu-repo/grantAgreement/Czech Science Foundation/GA/GA20-11140S/CZ/Essential Elements of Diamond Power Electronics/
dc.relation.projectidinfo:eu-repo/grantAgreement/Ministry of Education, Youth and Sports/LM/90251/CZ/CzechNanoLab II - Výzkumná infrastruktura CzechNanoLab - LM2023051 (2023–2026)/CzechNanoLab II
dc.rights.accessclosedAccess
dc.type.statusPeer-reviewed
dc.type.versionpublishedVersion


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