HAZDRA, P., et al. Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers. Diamond and Related Materials. 2022, 126 ISSN 1879-0062. DOI 10.1016/j.diamond.2022.109088. Available from: https://www.sciencedirect.com/science/article/pii/S0925963522002709
The article reports for the first time about the successful fabrication of pseudo-vertical diodes on {113} oriented homoepitaxial boron-doped diamond using molybdenum as a metal for both the Schottky and ohmic contacts. Results confirm that the use of {113} oriented homoepitaxial boron-doped diamond for the fabrication of high-temperature power devices is advantageous, as it enables high-quality Schottky and ohmic contacts.
