Double pulse test (DPT) is usually used to characterize and verify turn-on/turn-off operation of power
switches. Yet, new high frequency switching devices based on SiC and GaN technologies require much
more elaborate DPT circuitry and sensing nodes compared to the established Si devices. Especially,
suitable current sensors are challenging to realize and always limit the bandwidth.
We propose a Transmission Line Pulsing (TLP)-based technique, which we call sensor gap TLP (sgTLP)
and which is capable to monitor the transient currents and voltages during the turn-on sequence of a
power MOSFET, without the need of a current sensor. The proposed sgTLP approach is compared to
established TLP methods in two applications: the passive switching of a fast transient voltage suppression
diode and the active switching of a Si power MOSFET. The novel sgTLP shows the same or better
characteristics than both of the standard methods, but needs only one measurement, where standard TLP
would need two separate methods. Especially, sgTLP detected rise times of 54 ps of a current and 52 ps
of a voltage signal using a pulse duration of 100 ns. The measured characteristics of the MOSFET turnon
reveals several inductive and capacitive coupling mechanisms that are not analyzable by the established
TLP methods but become visible applying sgTLP.
cze
dc.language.iso
en
en
dc.publisher
České vysoké učení technické v Praze. České centrum IET
cze
dc.title
Measuring Transient I/V Turn-On Behavior of a Power MOSFET without a Current Sensor
en
dc.title.alternative
15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS