Wafer resistivity is one of the most important parameters in production of Power Semiconductor
Devices (PSD). This parameter is mainly responsible for achieving required breakdown voltage and
other electric parameters. Proposal article describes principles and details of newly designed resonant
method and new equipment according patent [1] and compares it with commonly known 4point method.
This new method is based on resonant measurement of capacity and following calculation. New method
exhibits comparable accuracy with 4point method and brings additional advantages.
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en
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České vysoké učení technické v Praze. České centrum IET
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dc.title
New method for Si-wafer resistivity determination
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15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS