dc.contributor.author | Maresca, L. | |
dc.contributor.author | Auriemma, G. | |
dc.contributor.author | Boccarossa, M. | |
dc.contributor.author | Borghese, A. | |
dc.contributor.author | Riccio, M. | |
dc.contributor.author | Breglio, G. | |
dc.contributor.author | Irace, A. | |
dc.date.accessioned | 2021-11-11T10:29:05Z | |
dc.date.available | 2021-11-11T10:29:05Z | |
dc.date.issued | 2021 | |
dc.identifier.uri | http://hdl.handle.net/10467/98479 | |
dc.description.abstract | Recently, the human body model - electrostatic discharge (HBM-ESD) test capability for power diodes
was introduced among the requirements in the field of automotive include for a superior reliability.
During the HBM-ESD test, the DUT works in avalanche conditions and it is still not well understood the
failure modality occurring in power diodes. The available commercial HBM-ESD testers only give
information about the maximum voltage rate, without any specific measurement of electrical waveforms.
In this work we present a HBM - ESD tester for the characterization of power semiconductor devices up
to 6 kV. In the proposed tester both the voltage and current DUT waveforms are measured, for a further
gain of the failure analysis in power diodes. | en |
dc.language.iso | en | en |
dc.publisher | České vysoké učení technické v Praze. České centrum IET | cze |
dc.title | Development of an HBM-ESD tester for power semiconductor devices | en |
dc.title.alternative | 15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS | |
dc.type | stať ve sborníku | cze |
dc.type | conference paper | en |
dc.identifier.doi | 10.14311/ISPS.2021.019 | |