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dc.contributor.authorHongyang Yan
dc.contributor.authorSankara Narayanan, E.M.
dc.date.accessioned2021-11-11T10:19:06Z
dc.date.available2021-11-11T10:19:06Z
dc.date.issued2021
dc.identifier.isbn978-80-01-06875-5
dc.identifier.urihttp://hdl.handle.net/10467/98478
dc.description.abstractThis is the first report on a novel multi-polarization channel applied to realize normally-off and high- performance vertical GaN device devices for low voltage applications. This structure is made with 2DHG introduced to realize the enhancement mode channel instead of p-GaN as in conventional vertical GaN MOSFETs. As the 2DHG depends upon growth conditions, p-type doping activation issues can be overcome. The Mg-doped layer is only used to reduce the short-channel effects, as the 2DHG layer is too thin. Two more 2DEG layers are formed through AlGaN/GaN/AlGaN/GaN polarization structure, which minimizes the on-state resistance. Simulation analysis shows that this proposed structure can provide a large drain current at ~ 500 𝑚𝐴/𝑚𝑚 level. The calculation results show this novel vertical GaN MOSFET – termed as SV GaN FET - has the potential of breaking the GaN material limit in the trade- off between area-specific on-resistance (𝑅(𝑜𝑛,𝑠𝑝)) and breakdown voltage at low voltages.en
dc.language.isoenen
dc.publisherČeské vysoké učení technické v Praze. České centrum IETcze
dc.titleScalable Vertical GaN FETs (SV- GaN FETs) for Low Voltage Applicationsen
dc.title.alternative15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS
dc.typestať ve sborníkucze
dc.typeconference paperen
dc.identifier.doi10.14311/ISPS.2021.017


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