The introduction of wide band gap semiconductor devices leads to smaller package sizes, higher power densities
and higher switching frequencies, which is advantageous compared to the power electronics based on the
conventional silicon devices. However, due to the small insulation distances and the limited temperature range
of available package materials, it is not possible to exploit these advantages completely. In this study, the
properties of Parylene coatings as passivation layers in power semiconductor devices is investigated. The
material would be particularly advantageous for double-side cooled power modules because it can fill the small
gaps between different conductive layers, which is not possible with conventional packaging technologies.
Parylene is promising to provide an excellent insulation performance even in these areas and exhibits a good
temperature stability. Furthermore, this polymer acts as a barrier for humidity, dirt and corrosive gasses. Two
types of Parylene were tested using the High-Voltage, High Humidity, High Temperature Reverse Bias
(HV-H³TRB) test on substrate level and the better Parylene type also on automotive three-phase modules. The
results are encouraging, although the performance strongly depends on the Parylene type and although a
sensitivity to the respecive surface condition to be coated became apparent.
en
dc.language.iso
en
en
dc.publisher
České vysoké učení technické v Praze. České centrum IET
cze
dc.title
Parylene as Coating for Power Semiconductor Devices
en
dc.title.alternative
15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS